o top i g o back g i wbfbp-03b plastic-encapsulate transistors TSA114ENND03 transistor description pnp digital transistor features 1) built-in bias resistors enable the confi guration of an inverter circuit without connecting external input resistors 2) the bias resistors consis t of thin-film resistors with complete isolation to a llow pos itive biasing of the input.they also have the advantage of almost completely eliminating parasitic effects 3) only the on/off conditions need to be set for operation, making device design easy application pnp digital transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: 14 equivalent circuit o 14 i g absolute maximum ratings(ta=25 ) parameter symbol value unit s supply voltage v cc -50 v input voltage v in -40~10 v i o -50 output current i c(max) -100 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -55~150 electrical characteristics (ta=25 ) parameter sy m bol min typ max unit conditions v i(off) -0.5 v cc =-5v ,i o =-100 a input voltage v i(on) -3 v v o =-0.3v ,i o =-10 ma output voltage v o(on) -0.3 v i o /i i =-10ma/-0.5ma input current i i -0.88 ma v i =-5v output current i o(off) -0.5 a v cc =-50v, v i =0 dc current gain g i 30 v o =-5v ,i o =-5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =-10v ,i e =5ma,f=100mhz wbfbp-03b (1.21.20.5) unit: mm 1. in 2. gnd 3. out 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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